Kangoh Yun

Title: Kangoh Yun - Innovator in Semiconductor Technology

Introduction

Kangoh Yun is a prominent inventor based in Hwaseong-si, South Korea. He is known for his contributions to semiconductor technology, particularly in the development of high voltage transistors. His innovative work has led to advancements in the efficiency and performance of semiconductor devices.

Latest Patents

Kangoh Yun holds a patent for a semiconductor device that features high voltage transistors. This device includes a gate structure positioned on a substrate, which has a first sidewall and a second sidewall facing each other. The design incorporates a first impurity region located within the upper portion of the substrate, spaced apart from the first sidewall. Additionally, a third impurity region is also present within the upper portion of the substrate, spaced apart from the second sidewall. A first trench is situated within the substrate between the first sidewall and the first impurity region, with a first barrier insulation pattern disposed within this trench. This innovative design enhances the performance of semiconductor devices.

Career Highlights

Kangoh Yun is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to contribute significantly to the field of semiconductor technology. His expertise and innovative approach have made him a valuable asset to the company.

Collaborations

Kangoh Yun has collaborated with notable colleagues, including Sungkweon Baek and Taeyoung Kim. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Kangoh Yun's contributions to semiconductor technology exemplify the impact of innovation in the field. His patent for a semiconductor device with high voltage transistors showcases his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.