The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Mar. 12, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongjin Lee, Suwon-si, KR;
Junhee Lim, Suwon-si, KR;
Hakseon Kim, Suwon-si, KR;
Kangoh Yun, Suwon-si, KR;
Sohyun Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device includes a substrate including an active region including a central active region, base active regions and extended active regions integrated together and defined by a device isolation film. A drain region is located in the central active region, and source regions are respectively located in the base active regions. The base active regions are spaced apart from each other in different diagonal directions with respect to the central active region in a plan view. The extended active regions each have an L-shape, connect the central active region and the base active regions, and are spaced apart from each other. Gate structures that respectively cross the base active regions and are spaced apart from each other on the substrate. The central active region, the extended active regions, the base active regions, and the gate structures configure pass transistors, and the pass transistors share the drain region.