Suwon, South Korea

Sohyun Lee

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sohyun Lee. Retrieved from https://idiyas.com/inventor/sohyun-lee-ghx0ctb0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sohyun Lee - Innovator in Semiconductor Technology

Introduction

Sohyun Lee is an inventor based in Suwon-si, South Korea. He is known for his contributions to semiconductor technology, focusing on innovative designs and applications. Although he currently holds no granted patents, his work in the field is noteworthy.

Latest Patent Applications

Sohyun Lee has submitted several patent applications that showcase his expertise. One of his latest applications is for a semiconductor device that includes a substrate and a doped region with impurities of a first conductivity type. This device features a gate structure and a first contact that is electrically connected to the doped region. The design incorporates poly silicon and metallic materials, enhancing its functionality.

Another significant application is for an integrated circuit device and electronic system. This device includes a substrate with an active region that integrates various active regions defined by a device isolation film. The design features a central active region, base active regions, and extended active regions, all configured to optimize performance. Gate structures are strategically placed to enhance the device's capabilities.

Conclusion

Sohyun Lee is an innovative inventor in the semiconductor field, with promising patent applications that reflect his technical skills and creativity. His contributions may lead to significant advancements in electronic systems and integrated circuit devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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