Samsung Electronics Co., Ltd.

Kangoh Yun

Taeyoung Kim

Junhee Lim

Sungkweon Baek

Hakseon Kim

Changhoon Jeon

A semiconductor device includes a gate structure disposed on a substrate. The gate structure has a first sidewall and a second sidewall facing the first sidewall. A first impurity region is disposed within an upper portion of the substrate. The first impurity region is spaced apart from the first sidewall. A third impurity region is within the upper portion of the substrate. The third impurity region is spaced apart from the second sidewall. A first trench is disposed within the substrate between the first sidewall and the first impurity region. The first trench is spaced apart from the first sidewall. A first barrier insulation pattern is disposed within the first trench.

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Hwaseong-si, South Korea

Kangoh Yun