Nishinomiya, Japan

Kaname Motoyoshi

This inventor holds 26 USPTO granted patents and 5 published patent applications, primarily in Radio Frequency Amplifiers. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Nuvoton Technology Corporation Japan. Active years: 1993-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kaname Motoyoshi. Retrieved from https://idiyas.com/inventor/kaname-motoyoshi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 50.0

Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 107(Granted Patents)


Location History:

  • Osaka, JP (1993)
  • Nishinomiya, JP (2001 - 2011)
  • Hyogo, JP (2008 - 2023)

Company Filing History:


Years Active: 1993-2024

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Areas of Expertise:
Monolithic Semiconductor Device
Hybrid Semiconductor Device
Power Amplifier
High-Frequency Transistor
Radio Frequency Amplifier Circuit
Detector Circuit
Wireless Communication
Transmission Apparatus
Cellular Mobile Telephone
Amplifying Circuit
Attenuator
Semiconductor Apparatus
26 patents (USPTO):Explore Patents

Title: The Innovative Mind of Kaname Motoyoshi

Introduction

Kaname Motoyoshi, a distinguished inventor based in Nishinomiya, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 26 patents, Motoyoshi's work primarily focuses on advancements in monolithic and hybrid semiconductor devices, showcasing his expertise in high-electron-mobility transistors (HEMT).

Latest Patents

Among his latest innovations, Motoyoshi has developed a monolithic semiconductor device that comprises a substrate, a first nitride semiconductor layer, and a second nitride semiconductor layer with a higher band gap than the first layer. This device features a HEMT type first transistor designed for power amplification and a first bias circuit that applies bias voltage to the transistor's gate. Another notable patent is his power amplifier device, which incorporates dual power supply terminals, a power amplification transistor, and a monitoring transistor that emulates the former's operations while generating and adjusting bias voltage based on current flow.

Career Highlights

Throughout his career, Kaname Motoyoshi has worked with esteemed organizations such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His dedication to innovation and excellence has earned him recognition in the semiconductor industry, wherein his inventions have led to enhanced performance and efficiency in electronic devices.

Collaborations

Motoyoshi has collaborated with skilled colleagues like Masahiko Inamori and Masao Nakayama, sharing insights and expertise that have contributed to their collective successes in developing cutting-edge technologies. These collaborations illustrate the importance of teamwork in driving innovation within the highly competitive field of semiconductor design.

Conclusion

Kaname Motoyoshi remains a prominent figure in semiconductor innovation, with his extensive patent portfolio reflecting his dedication to advancing the industry. His contributions have significantly impacted technology, emphasizing the importance of creativity and collaboration in the pursuit of groundbreaking inventions. Through his ongoing work, Motoyoshi continues to inspire future generations of inventors in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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