The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jul. 20, 2020
Panasonic Semiconductor Solutions Co., Ltd., Kyoto, JP;
Kouki Yamamoto, Shiga, JP;
Masatoshi Kamitani, Osaka, JP;
Shingo Matsuda, Kyoto, JP;
Hiroshi Sugiyama, Osaka, JP;
Kaname Motoyoshi, Hyogo, JP;
Masao Nakayama, Shiga, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.