Sapporo, Japan

Junichi Motohisa

This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignees: Hokkaido University, Sharp Kabushiki Kaisha Corporation, Honda Motor Co., Ltd.. Active years: 2009-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junichi Motohisa. Retrieved from https://idiyas.com/inventor/junichi-motohisa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 49(Granted Patents)


Company Filing History:


Years Active: 2009-2014

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3 patents (USPTO):Explore Patents

Title: Junichi Motohisa: Innovator in Semiconductor Technology

Introduction

Junichi Motohisa is a prominent inventor based in Sapporo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor devices and methods that enhance performance and efficiency.

Latest Patents

One of his latest patents involves a semiconductor device and method for manufacturing a semiconductor device. This invention includes a glass substrate, a lower electrode layer, and an n-type doped polycrystalline silicon semiconductor layer. It features a low-temperature insulating film with openings that serve as nuclei for the growth of a nanowire. The nanowire has a core-shell structure, comprising an n-type GaAs core layer and a p-type GaAs shell layer. Additionally, the nanowire can be formed with a quantum well structure, utilizing InAs to reduce the process temperature.

Another notable patent is for a semiconductor light-emitting element array that includes a semiconductor rod. This invention describes semiconductor surface emitting elements with multiple wavelengths manufactured on a single substrate through MOVPE selective growth. The array consists of a semiconductor crystal substrate, an insulating film divided into regions, and semiconductor rods extending from the substrate surface. Each rod has an n-type and p-type semiconductor layer laminated in its extending direction, creating a p-n junction.

Career Highlights

Junichi Motohisa has worked with esteemed institutions such as Hokkaido University and Sharp Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

He has collaborated with notable colleagues, including Takashi Fukui and Katsuhiro Tomioka. Their joint efforts have contributed to advancements in the semiconductor field.

Conclusion

Junichi Motohisa's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His patents reflect a commitment to developing cutting-edge solutions that have the potential to impact various applications in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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