The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Sep. 30, 2008
Hajime Goto, Wako, JP;
Junichi Motohisa, Sapporo, JP;
Takashi Fukui, Sapporo, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrateis grown a semiconductorcomprising the same material as the substratein the shape of a wire. On the semiconductorare successively grown semiconductorsandwith a narrower band gap in the shape of a wire. The semiconductormay be directly grown in the shape of a wire on the nucleation site formed on the substrateIt is preferred to form the nucleation site by forming an amorphous SiOcoatingon the substrateand etching a part of the amorphous SiOcoatingFurther, it is preferred to form an insulating filmin the region except the nucleation sites on the substrateby allowing the amorphous SiOcoatingto remain therein. The semiconductoris GaP; the semiconductoris AlGaAs; the semiconductoris GaAs; the semiconductoris InGaAs; and the semiconductoris InGaAs.