Sharp Kabushiki Kaisha Corporation

Hokkaido University

Honda Motor Co., Ltd.

Junichi Motohisa

Takashi Fukui

Hajime Goto

Katsuhiro Tomioka

Kenji Hiruma

Shinjiro Hara

Shinjiroh Hara

Disclosed is a semiconductor device () which comprises a glass substrate (), a lower electrode layer (), an n-type doped polycrystalline silicon semiconductor layer (), a low-temperature insulating film () in which openings () that serve as nuclei for growth of a nanowire () are formed, the nanowire () that is grown over the low-temperature insulating film () and has a core-shell structure, an insulating layer () that surrounds the nanowire (), and an upper electrode layer (). The nanowire () comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.

Semiconductor device and method for manufacturing semiconductor device

Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.

Semiconductor light-emitting element array including a semiconductor rod

There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrateis grown a semiconductorcomprising the same material as the substratein the shape of a wire. On the semiconductorare successively grown semiconductorsandwith a narrower band gap in the shape of a wire. The semiconductormay be directly grown in the shape of a wire on the nucleation site formed on the substrateIt is preferred to form the nucleation site by forming an amorphous SiOcoatingon the substrateand etching a part of the amorphous SiOcoatingFurther, it is preferred to form an insulating filmin the region except the nucleation sites on the substrateby allowing the amorphous SiOcoatingto remain therein. The semiconductoris GaP; the semiconductoris AlGaAs; the semiconductoris GaAs; the semiconductoris InGaAs; and the semiconductoris InGaAs.

Method for producing multijunction solar cell

Growing community of inventors

Sapporo, Japan

Junichi Motohisa