The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Feb. 23, 2011
Takashi Fukui, Sapporo, JP;
Katsuhiro Tomioka, Sapporo, JP;
Junichi Motohisa, Sapporo, JP;
Shinjiroh Hara, Sapporo, JP;
Takashi Fukui, Sapporo, JP;
Katsuhiro Tomioka, Sapporo, JP;
Junichi Motohisa, Sapporo, JP;
Shinjiroh Hara, Sapporo, JP;
National University Corporation Hokkaido University, Hokkaido, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a semiconductor device () which comprises a glass substrate (), a lower electrode layer (), an n-type doped polycrystalline silicon semiconductor layer (), a low-temperature insulating film () in which openings () that serve as nuclei for growth of a nanowire () are formed, the nanowire () that is grown over the low-temperature insulating film () and has a core-shell structure, an insulating layer () that surrounds the nanowire (), and an upper electrode layer (). The nanowire () comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.