The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Oct. 17, 2008
Kenji Hiruma, Sapporo, JP;
Shinjiro Hara, Sapporo, JP;
Junichi Motohisa, Sapporo, JP;
Takashi Fukui, Sapporo, JP;
Kenji Hiruma, Sapporo, JP;
Shinjiro Hara, Sapporo, JP;
Junichi Motohisa, Sapporo, JP;
Takashi Fukui, Sapporo, JP;
National University Corporation Hokkaido University, Hokkaido, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.