Kaohsiung, Taiwan

Jung-Hui Tsai


Average Co-Inventor Count = 1.9

ph-index = 3

Forward Citations = 16(Granted Patents)


Location History:

  • Tainan, TW (1997 - 1999)
  • Kaohsiung, TW (2002 - 2005)

Company Filing History:


Years Active: 1997-2005

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6 patents (USPTO):Explore Patents

Title: **Jung-Hui Tsai: A Pioneering Inventor in Semiconductor Technology**

Introduction

Jung-Hui Tsai is a notable inventor hailing from Kaohsiung, Taiwan. With a remarkable portfolio of six patents, he has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors.

Latest Patents

One of Jung-Hui Tsai's latest patents introduces a pseudomorphic high electron mobility field effect transistor (pHEMT) with exceptional device linearity. This innovation features a unique n/p/n camel-gate heterostructure with a δ-doped sheet structure. In the specific example of InGaP/InGaAs/GaAs δ-doped pHEMTs with an n-GaAs/p-InGaP/n-InGaP camel-gate structure, the turn-on voltage of the gate is noted to exceed 1.7 V. The design ensures a minimal change in total depletion thickness under gate bias, facilitating the achievement of high drain current and linear transconductance simultaneously. These superior device performances position this technology as promising for linear and large signal amplifiers as well as high-frequency circuit applications.

In addition to the pHEMT innovation, Tsai has developed heterojunction bipolar transistors (HBTs) characterized by extremely low offset voltage and high current gain. By incorporating a spacer/δ-doped sheet/spacer at the base-emitter heterojunction, this invention effectively eliminates potential spikes at the B-E junction while enhancing hole confinement. For instance, InP/GaInAs HBTs have demonstrated a remarkable maximum common-emitter current gain of 455 and an offset voltage of less than 60 mV under large B-E bias conditions.

Career Highlights

Throughout his career, Jung-Hui Tsai has engaged with prestigious institutions, including the National Science Council and National Kaohsiung Normal University. His roles at these organizations have enabled him to advance his research and contribute to groundbreaking innovations in the semiconductor domain.

Collaborations

Jung-Hui's successful inventions have benefitted from collaborations with esteemed colleagues, including Wen-Chau Liu and Wen-Shiung Lour. These partnerships have fostered an environment of innovation, leading to the development of state-of-the-art semiconductor technologies.

Conclusion

Jung-Hui Tsai stands out as a prominent inventor whose work in the field of semiconductor technology continues to shape the landscape of modern electronics. With six patents to his name and ongoing contributions to advanced transistor designs, his innovations promise to drive progress in high-frequency circuit applications and beyond.

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