The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Dec. 29, 2000
Applicant:
Inventors:
Wen-Chau Liu, Tainan, TW;
Jung-Hui Tsai, Kaohsiung, TW;
Wen-Lung Chang, Tainan, TW;
Kuo-Hui Yu, Tainan, TW;
Kun-Wei Lin, Tainan, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9778 ;
U.S. Cl.
CPC ...
H01L 2/9778 ;
Abstract
The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.