The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Dec. 11, 1996
National Science Council of Republic of China, Taipei, TW;
Abstract
The invention relates to the structure of the camel-gate field-effect transistor with multiple modulation-doped channels. The device structure, from the bottom to the top in succession, includes the substrate, the buffer layer, the multiple modulation-doped channels, the thin and complete depletion layer, and the ohmic contact layer. The transistor is characterized by a camel-gate diode, which is composed of the multiple modulation-doped channels, the thin and complete depletion layer and the ohmic contact layer. The gate structure may achieve the high potential height between the gate electrode and the source electrode as well as the high breakdown voltage performance. Furthermore, the use of multiple modulation-doped channels, made of n-type GaAs materials with different thickness and doped concentration, can exhibit excellent properties of high output current, large and linear transconductances.