The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Aug. 08, 2003
Jung-Hui Tsai, Kaohsiung, TW;
National Kaohsiung Normal University, Kaohsiung, TW;
Abstract
Novel heterojunction bipolar transistors (HBT's) with high current gain and extremely low offset voltage are disclosed. Owing to the insertion of spacer/&dgr;-doped sheet/spacer at base-emitter (B-E) heterojunction in this invention, the potential spike at B-E junction can be eliminated and the confinement effect for holes are enhanced. The potential spike is not observed under large B-E bias, and the offset voltage is still relatively small with small increase. In particular, for the HBT's with large conduction band discontinuity, the method of the invention is more efficient for completely eliminating the potential spike. For the example of InP/GaInAs HBT, a maximum common-emitter current gain of 455 and above 320 at I =5 &mgr;A, and a low offset voltage less 60 mV are achieved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile