Jun Wan

This inventor holds 81 USPTO granted patents and 21 published patent applications and 8 EPO patents, primarily in Non-Volatile Memory (CPC class G11C). Top assignees: Sandisk Technologies Inc., Sandisk Corporation, Micron Technology Incorporated. Active years: 2006-2026.

USPTO Granted Patents = 81 (Patent Applications = 21)

% Patents Active = 76.5

EPO Patents = 8 (Patent Applications = 10)

Average Co-Inventor Count = 3.4

ph-index = 22

Forward Citations = 1,149(Granted Patents)

Forward Citations (Not Self Cited) = 1,086(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sunnyvale, CA (US) (2006 - 2010)
Milpitas, CA (US) (2014)
San Jose, CA (US) (2009 - 2024)

Company Filing History:

41 out of 4,930

Sandisk Technologies Inc.

Micron Technology Incorporated

patents

4. 2 out of 5,424

Western Digital Technologies, Inc.

patents

Years Active: 2006-2026

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Areas of Expertise:

Non-Volatile Memory

Error Handling

Multi-Pass Programming

Read Calibration

Temperature Sensor Management

Data Refresh

Wordline Coupling

Bad Block Mitigation

Data Scrambling

Dynamic Read Level Scan

Charge Storage Region

ECC Efficiency

81 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12676207 - Read threshold management using page type (2026-07-07),

2. 12664046 - Bin-based read error handling flows using a fast corrective read operation (2026-06-23),

3. 12651637 - Read operation with capacity usage detection scheme (2026-06-09),

4. 12639166 - Valley check memory system command (2026-05-26),

5. 12625764 - Memory device bad column identification and compensation (2026-05-12),

6. 12620447 - Adaptive temperature compensation for a memory device (2026-05-05),

7. 12597476 - Program verify compensation in a memory device with a defective deck (2026-04-07),

8. 12561072 - Corrective read with parallel auto-read calibration in a memory sub-system (2026-02-24),

9. 12430206 - Temperature sensor management during error handling operations in a memory sub-system (2025-09-30),

10. 12307121 - Filtering metrics associated with memory (2025-05-20),

11. 12198769 - Smart early detection of wordline-memory hole defects with wordline-dependent dual sensing during erase verify (2025-01-14),

12. 12148480 - 3D NAND memory with fast corrective read (2024-11-19),

13. 12125537 - Variable programming voltage step size control during programming of a memory device (2024-10-22),

14. 12057169 - Techniques for reading memory cells in a memory device during a multi-pass programming operation (2024-08-06),

15. 12046297 - Method to optimize first read versus second read margin by switching boost timing (2024-07-23),

Title: Innovations and Achievements of Jun Wan in Memory Technology

Introduction

Jun Wan, based in San Jose, California, is a prolific inventor with an impressive portfolio of 71 patents. His work primarily focuses on innovations in memory technology, contributing significantly to advancements in data storage solutions.

Latest Patents

Some of his latest patents include groundbreaking inventions such as:

1. **Smart Early Detection of Wordline-Memory Hole Defects**

This apparatus is designed to improve the reliability of memory cells by employing a dual sensing mechanism during the erase verify process. The control circuit intelligently manages the erasure and verification of memory blocks, ensuring that any defects are promptly identified and addressed through a meticulous analysis of verify status mismatches.

2. **3D NAND Memory with Fast Corrective Read**

This invention introduces an efficient corrective read operation within a memory subsystem. The innovative apparatus includes a processing device that applies a charge to activate a first word line, effectively neutralizing unwanted charges and enabling accurate sensing of a neighboring word line’s charge distribution.

Career Highlights

Throughout his career, Jun Wan has made significant contributions while working at notable companies such as Sandisk Technologies Inc. and SanDisk Corporation. His expertise in memory technology has helped shape the development of advanced memory systems that are crucial for modern computing needs.

Collaborations

Jun's work has often seen collaborations with talented individuals such as Jeffrey W. Lutze and Yupin K. Fong. These partnerships have fostered a creative research environment, leading to innovative solutions that address challenges in the field of memory technology.

Conclusion

Jun Wan's contributions to memory technology through his numerous patents highlight his role as a key innovator in the industry. By focusing on solving complex issues related to memory storage and retrieval, he continues to push the boundaries of technology, paving the way for advancements that will benefit future generations.