The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Nov. 09, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yu-Chung Lien, San Jose, CA (US);

Jun Wan, San Jose, CA (US);

Zhenming Zhou, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A method for partial block read compensation can include receiving a read request that specifies a memory cell connected to a string of series-connected memory cells in an array of memory cells on a memory device, the string located at an intersection of a wordline and a bitline, and causing a first voltage applied to the wordline to which the specified memory cell is connected to ramp to a first predetermined value. The method can include causing a second voltage applied to the bitline to which the specified memory cell is connected to ramp to a second predetermined value, and can include comparing, using a current comparator, a current along the string with a reference current to generate an analog output signal. It can also include causing a voltage offset, based on the analog output signal, to be applied to a read voltage level during a sensing operation.


Find Patent Forward Citations

Lien, Yu-Chung. (2026). Read operation with capacity usage detection scheme (U.S. Patent No. 12651637). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12651637

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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