Seoul, South Korea

Jun-Hee Lim

This inventor holds 23 USPTO granted patents and 2 published patent applications, primarily in Vertical Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Goldstar Electron Co., Ltd., Lg Semicon Co., Ltd.. Active years: 1998-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun-Hee Lim. Retrieved from https://idiyas.com/inventor/jun-hee-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 82.6

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 170(Granted Patents)


Location History:

  • Suwon-si, KR (2015)
  • Seocho-gu, KR (2015)
  • Seoul, KR (1998 - 2021)

Company Filing History:


Years Active: 1998-2021

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Areas of Expertise:
Vertical Semiconductor Devices
Memory Devices
Manufacturing Methods
Transistors
Capacitor Structures
Wave Gate
Buried Channel Array
Low Resistivity Region
Recessed Channel
Logic Circuits
Fuse/Anti-Fuse Transistor
Trench Isolation
23 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Jun-Hee Lim – A Leader in Vertical Semiconductor Technologies

Introduction: Jun-Hee Lim is a prominent inventor based in Seoul, South Korea, renowned for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 23 patents, he has consistently pushed the boundaries of innovation in vertical semiconductor devices.

Latest Patents: Among his latest groundbreaking patents, Jun-Hee Lim has developed advanced methodologies for vertical semiconductor devices. His innovative approach includes a unique method of manufacturing these devices by alternately forming an insulation layer and a sacrificial layer on a substrate to define a specific structure. This process involves etching the structure to create a hole exposing the substrate, where an intricate series of semiconductor patterns—including a charge storage pattern, blocking pattern, and multiple channel patterns—are meticulously crafted. Furthermore, his developments in vertical memory devices incorporate gate electrodes and a variable resistance structure, integrating quantum dots to enhance performance and efficiency.

Career Highlights: Throughout his career, Jun-Hee Lim has been affiliated with leading companies in the semiconductor industry, including Samsung Electronics Co., Ltd. and LG Semicon Co., Ltd. His work at these esteemed organizations has positioned him as a key player in the advancement of semiconductor technologies, particularly in vertical device structures.

Collaborations: Jun-Hee Lim has collaborated with esteemed colleagues in the industry, such as Yong-Seok Kim and Kyung-Hwan Lee. These partnerships have fostered a dynamic exchange of ideas and innovations, further advancing semiconductor research and development.

Conclusion: Jun-Hee Lim’s impactful contributions to vertical semiconductor technologies exemplify the spirit of innovation that drives the electronics industry forward. His dedication to research and development has not only resulted in numerous patents but has also inspired future generations of inventors and engineers in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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