The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jul. 28, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Seung-Uk Han, Suwon-si, KR;
Won-Kyung Park, Seoul, KR;
Jun-Ho Park, Yongin-si, KR;
Jun-Hee Lim, Seoul, KR;
Ki-Jae Hur, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); G11C 7/06 (2006.01); G11C 16/26 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); G11C 5/025 (2013.01); G11C 7/065 (2013.01); G11C 11/4091 (2013.01); G11C 16/26 (2013.01); H01L 27/088 (2013.01);
Abstract
A semiconductor device includes an active region defined on a substrate, a gate electrode disposed on the active region and covering two adjacent corners of the active region, a drain area formed in the active region adjacent to a first side of the gate electrode, and a source area formed in the active region adjacent to a second side of the gate electrode. The first and second sides of the gate electrode are spaced apart from each other, and the first side has a bent shape.