The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Jul. 12, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyung-Hwan Lee, Hwaseong-si, KR;
Yong-Seok Kim, Suwon-si, KR;
Jun-Hee Lim, Seoul, KR;
Kohji Kanamori, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract
A vertical memory device includes gate electrodes on a substrate and a first structure. The gate electrodes may be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate. The first structure extends through the gate electrodes in the first direction, and includes a channel and a variable resistance structure sequentially stacked in a horizontal direction parallel to the upper surface of the substrate. The variable resistance structure may include quantum dots (QDs) therein.