Jongjin Lee

Title: Innovations by Jongjin Lee in Semiconductor Technology

Introduction

Jongjin Lee is a notable inventor based in Clifton Park, NY (US), recognized for his contributions to semiconductor technology. He holds 3 patents that showcase his expertise in developing advanced semiconductor devices.

Latest Patents

One of Jongjin Lee's latest patents is titled "Semiconductor device including backside contact structure with silicide layer formed in FEOL process." This invention provides a semiconductor device that includes a backside contact structure with a silicide layer formed in a front-end-of-line (FEOL) process. The method involves several steps, including forming a channel structure on a substrate and creating a silicide layer on a placeholder structure.

Another significant patent is "Semiconductor device including backside contact structure having positive slope and method of forming thereof." This patent discloses a system and method for creating a bottle-neck shaped backside contact structure in a semiconductor device. The structure features a first side partially within the first source/drain structure and a second side that contacts a backside power rail.

Career Highlights

Jongjin Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has significantly impacted the efficiency and performance of semiconductor devices.

Collaborations

Throughout his career, Jongjin Lee has collaborated with talented individuals such as Kang-ill Seo and Wonhyuk Hong. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of innovative solutions.

Conclusion

Jongjin Lee's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in technology.