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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12707953 B1

PDFFull Text
Date of Patent:
Aug. 11, 2026

Filed:

Jul. 13, 2023

Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myung Yang, Niskayuna, NY (US);

Wonhyuk Hong, Clifton Park, NY (US);

Myunghoon Jung, Clifton Park, NY (US);

Jongjin Lee, Clifton Park, NY (US);

Jaejik Baek, Watervliet, NY (US);

Kang-Ill Seo, Albany, NY (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device includes: at least one transistor comprising source/drain regions and 1gate structure; a contact isolation layer below the 1gate structure; and a backside contact plug connected to at least one of the 1source/drain regions, wherein the backside contact plug is formed below the 1source/drain region and extended to a region below the 1gate structure, and isolated from the 1gate structure by the contact isolation layer.

Find Patent Forward Citations

Yang, Myung. (2026). Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer (U.S. Patent No. 12707953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707953

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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