Myung Yang

Title: Myung Yang: Innovator in Transistor Technology

Introduction

Myung Yang is a notable inventor based in Niskayuna, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Myung Yang holds a patent for "Transistor stacks having insulating spacers, and related fabrication methods." This patent describes a transistor device that includes a substrate and a transistor stack featuring first and second transistors. The first or second transistor comprises multiple semiconductor channel layers, a gate positioned on these layers, and an insulating spacer located on the sidewall of the gate. Notably, the insulating spacer has two portions: a first portion on the sidewall of the gate and a second portion that is spaced apart from the gate's sidewall, possessing a lower dielectric constant than the first portion. This innovation enhances the performance and efficiency of transistor devices.

Career Highlights

Myung Yang is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work at Samsung has allowed him to collaborate with leading experts in the field and contribute to groundbreaking advancements in transistor design and fabrication.

Collaborations

Myung Yang has worked alongside talented colleagues such as Seung Min Song and Kang-ill Seo. Their collaborative efforts have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Myung Yang's contributions to transistor technology exemplify his dedication to innovation and excellence in the field. His patent and ongoing work at Samsung Electronics Co., Ltd. highlight his role as a key player in advancing semiconductor technology.