Samsung Electronics Co., Ltd.

Myung Yang

Kang-ill Seo

Jaehong Lee

Seung Min Song

Provided is a semiconductor device which includes: a 1source/drain region; a 2source/drain region with a 2contact plug thereon; a 3source/drain region; a 2metal line on the 2contact plug with a 2via therebetween; a 1additional metal line on the 2contact plug with a 1additional via therebetween, wherein the 2source/drain region is disposed between and connected to the 1source/drain region and the 3source/drain region, and wherein the 2metal line and the 1additional metal line are spaced apart from each other on the 2contact plug by a 1predetermined distance in a 2horizontal direction.

Macro device-under-test structure for measuring contact resistance of semiconductor device

Transistor devices are provided. A transistor device includes a substrate and a transistor stack including first and second transistors on the substrate. The first transistor or the second transistor includes a plurality of semiconductor channel layers, a gate on the plurality of semiconductor channel layers, and an insulating spacer that is on a sidewall of the gate and between the plurality of semiconductor channel layers. Moreover, the insulating spacer includes: a first portion on a sidewall of the gate; and a second portion that is spaced apart from the sidewall of the gate by the first portion, and that has a lower dielectric constant than the first portion. Related methods of forming transistor devices are also provided.

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Niskayuna, NY, United States of America

Myung Yang