The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Mar. 21, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Myung Yang, Niskayuna, NY (US);
Seung Min Song, Clifton Park, NY (US);
Kang-Ill Seo, Springfield, VA (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Transistor devices are provided. A transistor device includes a substrate and a transistor stack including first and second transistors on the substrate. The first transistor or the second transistor includes a plurality of semiconductor channel layers, a gate on the plurality of semiconductor channel layers, and an insulating spacer that is on a sidewall of the gate and between the plurality of semiconductor channel layers. Moreover, the insulating spacer includes: a first portion on a sidewall of the gate; and a second portion that is spaced apart from the sidewall of the gate by the first portion, and that has a lower dielectric constant than the first portion. Related methods of forming transistor devices are also provided.