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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12642083 B1

PDFFull Text
Date of Patent:
May. 26, 2026

Filed:

Sep. 17, 2024

Semiconductor device including backside contact structure formed based on wide placeholder structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonkeun Chung, Clifton Park, NY (US);

Byounghoon Kim, Rexford, NY (US);

Jongjin Lee, Clifton Park, NY (US);

Kang-Ill Seo, Springfield, VA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Brent A Fairbanks

Assistant Examiner:

Andre C Stevenson

Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

Provided is a semiconductor device including a backside contact structure formed based on a placeholder structure having a wide profile, an a method of manufacturing the same. The method may include: forming a source/drain region; and forming a backside contact structure on a bottom surface of the source/drain region such that a width of an upper portion of the backside contact structure is greater than a width of the source/drain region in a channel-length direction.

Find Patent Forward Citations

Chung, Wonkeun. (2026). Semiconductor device including backside contact structure formed based on wide placeholder structure (U.S. Patent No. 12642083). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12642083

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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