Suwon, South Korea

Jong Ok Ha

This inventor holds 21 USPTO granted patents, primarily in Power Amplifier Technology. Top assignees: Samsung Electro-Mechanics Co., Ltd., Korea Advanced Institute of Science and Technology. Active years: 2017-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Ok Ha. Retrieved from https://idiyas.com/inventor/jong-ok-ha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 85.7

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2017-2022

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Areas of Expertise:
Power Amplifier
Bias Circuit
Envelope Tracking
Linearity Improvement
Adaptive Multiband
Response Speed
Current Limiting
High-Frequency Signal
Nonlinear Distortion
Spurious Signal Reduction
Voltage Generation
Duty Cycle Control
21 patents (USPTO):Explore Patents

Title: Jong Ok Ha - Innovative Inventor from Suwon-si, South Korea

Introduction: Jong Ok Ha is a pioneering inventor hailing from Suwon-si, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jong Ok Ha holds several patents in the realm of electronics and telecommunications, showcasing her continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Jong Ok Ha has worked with various tech companies and research institutions, playing a key role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout her career, Jong Ok Ha has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge-sharing that has led to remarkable advancements in the tech sector.

Conclusion: Jong Ok Ha's passion for innovation, coupled with her relentless drive to create, has solidified her reputation as a trailblazing inventor in the tech world, inspiring future generations to push the limits of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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