The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Aug. 28, 2020
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Jong Ok Ha, Suwon-si, KR;

Iizuka Shinichi, Suwon-si, KR;

Kwang Du Lee, Suwon-si, KR;

Jeong Hoon Kim, Suwon-si, KR;

Young Wong Jang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/301 (2013.01); H03F 3/21 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01);
Abstract

An apparatus that generates and limits a bias current of a power amplifier is provided. The apparatus includes a bias current circuit that generates a bias current to bias the power amplifier, and critically limit an increase in bias current, and a band gap reference circuit that provides a reference voltage or a reference current to the bias current circuit. The bias current circuit is configured to critically limit the increase in bias current, as a first bias transistor that generates the bias current is converted from a triode region to a saturation region, based on the reference voltage or the reference current.


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