Boise, ID, United States of America

Jonathan D Harms

USPTO Granted Patents = 44 

 

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 57(Granted Patents)


Location History:

  • Hopkins, MN (US) (2014)
  • White Plains, NY (US) (2015 - 2018)
  • Boise, ID (US) (2016 - 2024)
  • Meridian, ID (US) (2021 - 2024)

Company Filing History:


Years Active: 2014-2025

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44 patents (USPTO):

Title: Innovations and Contributions of Jonathan D. Harms

Introduction

Jonathan D. Harms, located in Boise, ID, has made a significant impact in the field of technology through his impressive portfolio of 43 patents. His work primarily focuses on advancements in semiconductor technology and memory systems.

Latest Patents

Jonathan's recent patents include groundbreaking inventions such as "Wafer registration and overlay measurement systems and related methods." This invention describes a method for measuring overlay between an interest level and a reference level of a wafer, utilizing a magnetic field to detect residual magnetic fields from registration markers. This process allows for accurate calculation of positional offsets, enhancing wafer processing precision. Another notable patent is "Imprint management for memory," which outlines methods and systems to manage imprint recovery in memory cells. It addresses issues where memory cells exhibit a predisposition to store one logic state over another, proposing innovative recovery techniques adaptable to various operational conditions. These patents highlight Jonathan's commitment to enhancing the performance and reliability of memory systems.

Career Highlights

Jonathan has an established career, having worked at respected organizations such as Micron Technology Incorporated and the University of Minnesota. His roles at these institutions have allowed him to contribute significantly to R&D efforts in cutting-edge technologies.

Collaborations

Collaboration is a pivotal aspect of Jonathan's career. He has worked alongside renowned professionals such as Wei Chen and Jonathan J Strand. These partnerships have enabled the exchange of ideas and fostered further innovation in their respective projects and patents.

Conclusion

Jonathan D. Harms continues to exemplify the spirit of innovation through his contributions to technology and memory systems. His patents not only reflect his expertise but also demonstrate his dedication to solving complex challenges within the semiconductor field, impacting the industry for years to come.

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