Verona, NJ, United States of America

John Paul Edwards

USPTO Granted Patents = 9 

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 46(Granted Patents)


Location History:

  • Hillsborough, NJ (US) (2014)
  • Verona, NJ (US) (2013 - 2019)

Company Filing History:


Years Active: 2013-2019

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9 patents (USPTO):Explore Patents

Title: The Innovations of John Paul Edwards

Introduction

John Paul Edwards is a notable inventor based in Verona, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

One of his latest patents is for a heterostructure power transistor with an AlSiN passivation layer. This innovative semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between these active layers, enhancing the device's performance. The AlSiN passivation layer is strategically placed on the second active layer, while first and second ohmic contacts electrically connect to this layer. These contacts are laterally spaced apart, with a gate positioned between them, showcasing a sophisticated design aimed at improving electronic efficiency.

Career Highlights

John Paul Edwards is currently employed at Power Integrations, Inc., where he continues to develop cutting-edge technologies. His expertise in semiconductor devices has positioned him as a key player in the industry, contributing to advancements that benefit various electronic applications.

Collaborations

Throughout his career, Edwards has collaborated with talented individuals such as Jamal Ramdani and LinLin Liu. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

John Paul Edwards exemplifies the spirit of innovation in the semiconductor industry. His contributions, particularly in the realm of heterostructure power transistors, highlight his commitment to advancing technology. His work continues to influence the future of electronic devices and their applications.

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