Power Integrations, Inc.

John Paul Edwards

Jamal Ramdani

LinLin Liu

Michael Murphy

A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. An AlSiN passivation layer is disposed on the second active layer. First and second ohmic contacts electrically connect to the second active layer. The first and second ohmic contacts are laterally spaced-apart, with a gate being disposed between the first and second ohmic contacts.

Heterostructure power transistor with AlSiN passivation layer

A GaN HFET includes a silicon substrate with an AlOlayer above the silicon substrate. The AlOlayer has voids formed therein. A plurality of alternating GaN and AlN layers are above the AlOlayer. The GaN and AlN layers are under continuous compressive stress.

High-quality GaN high-voltage HFETs on silicon

A method of fabricating a multi-layer structure for a power transistor device includes performing, within a reaction chamber, a nitrogen plasma strike, resulting in the formation of a nitride layer directly on a nitride-based active semiconductor layer. A top surface of the nitride layer is then exposed to a second source. A subsequent nitrogen-oxygen plasma strike results in the formation of an oxy-nitride layer directly on the nitride layer. The nitride layer comprises a passivation layer and the oxy-nitride layer comprises a gate dielectric of the power transistor device.

Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure

Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline AlOfilm on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the &#x3c;111&#x3e; silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the AlOfilm. Each laminate layer includes an AlN film and a GaN film. A transistor or other device may be formed in the top GaN film.

High quality GaN high-voltage HFETs on silicon

Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline AlOfilm on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the &#x3c;111&#x3e; silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the AlOfilm. Each laminate layer includes an AN film and a GaN film. A transistor or other device may be formed in the top GaN film.

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Verona, NJ, United States of America

John Paul Edwards