The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Dec. 09, 2011
Jamal Ramdani, Raritan, NJ (US);
John P. Edwards, Verona, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Jamal Ramdani, Raritan, NJ (US);
John P. Edwards, Verona, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline AlOfilm on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the <111> silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the AlOfilm. Each laminate layer includes an AlN film and a GaN film. A transistor or other device may be formed in the top GaN film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile