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For the Inventor, By the Inventor

Ringoes, NJ, United States of America

John F Corboy, Jr

This inventor holds 11 USPTO granted patents. Top assignee: Rca Inc.. Active years: 1982-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John F Corboy, Jr. Retrieved from https://idiyas.com/inventor/john-f-corboy-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 10

Forward Citations = 332(Granted Patents)


Location History:

  • Ringoes, NJ (US) (1982 - 1986)
  • East Amwell Township, Hunterdon County, NJ (US) (1985 - 1987)

Company Filing History:

goldMedal11 out of 5,349 
 
Rca Inc.
 patents

Years Active: 1982-1987

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11 patents (USPTO):Explore Patents
1. 4698316 - Method of depositing uniformly thick selective epitaxial silicon (1987-10-06),
2. 4615762 - Method for thinning silicon (1986-10-07),
3. 4592792 - Method for forming uniformly thick selective epitaxial silicon (1986-06-03),
4. 4586240 - Vertical IGFET with internal gate and method for making same (1986-05-06),
5. 4578142 - Method for growing monocrystalline silicon through mask layer (1986-03-25),
6. 4557794 - Method for forming a void-free monocrystalline epitaxial layer on a mask (1985-12-10),
7. 4549926 - Method for growing monocrystalline silicon on a mask layer (1985-10-29),
8. 4546375 - Vertical IGFET with internal gate and method for making same (1985-10-08),
9. 4482422 - Method for growing a low defect monocrystalline layer on a mask (1984-11-13),
10. 4386255 - Susceptor for rotary disc reactor (1983-05-31),
11. 4352017 - Apparatus for determining the quality of a semiconductor surface (1982-09-28),

Title: The Innovations of John F Corboy, Jr.

Introduction

John F Corboy, Jr. is a notable inventor based in Ringoes, NJ (US), recognized for his contributions to the field of silicon technology. With a total of 11 patents to his name, Corboy has made significant advancements in methods related to silicon deposition and thinning.

Latest Patents

One of his latest patents is a method of depositing uniformly thick selective epitaxial silicon. This innovative technique involves depositing monocrystalline silicon at a uniform rate onto a variety of unequally sized monocrystalline nucleation sites. The process begins with a substrate that has an apertured oxide mask, which exposes nucleation sites on the substrate surface. The substrate is then treated with a mixture of dichlorosilane and hydrogen chloride at a temperature of 850 degrees Celsius and a pressure of less than approximately 50 torr for a predetermined duration. This results in the formation of monocrystalline silicon islands that are equal in thickness and have a flat profile across their major surfaces. Another significant patent is a method for thinning silicon, which entails oxidizing the surface of a silicon layer to transform it into oxide and subsequently removing the oxide to expose the silicon layer.

Career Highlights

Corboy's career is marked by his work at RCA Inc., where he has been instrumental in developing innovative technologies. His expertise in silicon processing has positioned him as a key figure in the industry, contributing to advancements that have practical applications in various fields.

Collaborations

Throughout his career, John F Corboy, Jr. has collaborated with notable colleagues, including Lubomir L Jastrzebski and Robert H Pagliaro, Jr. These collaborations have further enriched his work and contributed to the success of his inventions.

Conclusion

John F Corboy, Jr. stands out as a significant inventor in the realm of silicon technology, with a proven track record of innovation and collaboration. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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