Rca Inc.

John F Corboy, Jr

Lubomir L Jastrzebski

Scott C Blackstone

Robert H Pagliaro, Jr

Joseph Thomas McGinn

Ramazan Soydan

Samuel Berkman

Michael T Duffy

Peter J Zanzucchi

A method for depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites comprises initially providing a substrate having an apertured oxide mask on a major surface thereof. The oxide mask includes a plurality of apertures each of which exposes a nucleation site on the substrate surface. The substrate is then exposed to a mixture of dichlorosilane and hydrogen chloride at 850.degree. C. and a pressure less than approximately 50 torr, for a predetermined time. This yields a monocrystalline silicon island extending from each nucleation site. Each of the islands has a substantially flat profile across the major surface thereof and all islands are equal in thickness.

Method of depositing uniformly thick selective epitaxial silicon

A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.

Method for thinning silicon

Monocrystalline silicon is deposited on first and second portions of a substrate, the first and second portions having substantially unequal dimensions. The method comprises subjecting the substrate to a silicon-source gas and a predetermined concentration of chloride at a predetermined temperature. The chloride concentration is selected so as to create a substantially equally thick monocrystalline silicon deposit on each of the substrate portions.

Method for forming uniformly thick selective epitaxial silicon

A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.

Vertical IGFET with internal gate and method for making same

A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.

Method for growing monocrystalline silicon through mask layer

A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8.degree. and 14.degree. from a particular &lt;001&gt; direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.

Method for forming a void-free monocrystalline epitaxial layer on a mask

Method for growing monocrystalline silicon on a mask layer

An apertured mask layer is disposed on a substrate having a monocrystalline portion at a surface thereof. Essentially all edges of the mask apertures are parallel to a predetermined crystallographic direction. A monocrystalline layer is then deposited such that it grows within the mask apertures and over the mask in a direction perpendicular to the aperture edges.

Method for growing a low defect monocrystalline layer on a mask

A susceptor for use in a rotary disc reactor comprises a disc having a plurality of radial slots formed adjacent the periphery of the disc. The slots are circumferentially spaced from each other such that the oppositely-flowing heating currents in the sectors disposed between the slots are forced to be adjacent each other to cause a cancelling effect. A plurality of such discs may be supported in stack-like relationship by supporting posts having the ends thereof adapted to fit into the radial slots. Each disc also has radiation shielding means attached to and extending beyond the periphery thereof. The radiation shielding means is made of a material different from the susceptor material of the disc.

Susceptor for rotary disc reactor

The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the magnitude of the difference is a measure of the quality of the semiconductor material.

Growing community of inventors

Ringoes, NJ, United States of America

John F Corboy, Jr