The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 1987

Filed:

Nov. 29, 1985
Applicant:
Inventors:

John F Corboy, Jr, East Amwell Township, Hunterdon County, NJ (US);

Robert H Pagliaro, Jr, Ewing Township, Mercer County, NJ (US);

Lubomir L Jastrzebski, Plainsboro, NJ (US);

Ramazan Soydan, Berkley Township, Ocean County, NJ (US);

Assignee:

RCA Corporation, Princeton, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 89 ; 156612 ; 156613 ; 156647 ; 156657 ; 156662 ; 437 64 ; 437228 ;
Abstract

A method for depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites comprises initially providing a substrate having an apertured oxide mask on a major surface thereof. The oxide mask includes a plurality of apertures each of which exposes a nucleation site on the substrate surface. The substrate is then exposed to a mixture of dichlorosilane and hydrogen chloride at 850.degree. C. and a pressure less than approximately 50 torr, for a predetermined time. This yields a monocrystalline silicon island extending from each nucleation site. Each of the islands has a substantially flat profile across the major surface thereof and all islands are equal in thickness.


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