Trenton, NJ, United States of America

Robert H Pagliaro, Jr

This inventor holds 4 USPTO granted patents. Top assignee: Rca Inc.. Active years: 1985-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert H Pagliaro, Jr. Retrieved from https://idiyas.com/inventor/robert-h-pagliaro-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 204(Granted Patents)


Location History:

  • Trenton, NJ (US) (1985 - 1986)
  • Mercer County, NJ (US) (1986)
  • Ewing Township, Mercer County, NJ (US) (1987)

Company Filing History:


Years Active: 1985-1987

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4 patents (USPTO):Explore Patents

Title: The Innovations of Robert H Pagliaro, Jr.

Introduction

Robert H Pagliaro, Jr. is a notable inventor based in Trenton, NJ (US). He has made significant contributions to the field of silicon technology, holding a total of 4 patents. His work focuses on methods for depositing and thinning silicon layers, which are crucial in various applications within the semiconductor industry.

Latest Patents

One of his latest patents is titled "Method of depositing uniformly thick selective epitaxial silicon." This innovative method involves depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites. The process begins with a substrate that has an apertured oxide mask, which exposes nucleation sites on the substrate surface. The substrate is then treated with a mixture of dichlorosilane and hydrogen chloride at a temperature of 850°C and a pressure of less than approximately 50 torr for a predetermined time. This results in the formation of monocrystalline silicon islands that have a flat profile and equal thickness across their surfaces.

Another significant patent is the "Method for thinning silicon." This method entails providing a silicon layer with a surface, oxidizing the surface to convert the silicon into oxide, and subsequently removing the oxide to expose the silicon layer. This technique allows for the substantial and uniform thinning of silicon layers, which is essential for various electronic applications.

Career Highlights

Robert H Pagliaro, Jr. has had a distinguished career, working at RCA Inc., where he has been able to apply his innovative ideas in practical settings. His expertise in silicon technology has positioned him as a valuable asset in the field, contributing to advancements that enhance the performance and efficiency of semiconductor devices.

Collaborations

Throughout his career, Robert has collaborated with notable colleagues, including Lubomir L Jastrzebski and John F Corboy, Jr. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies in the semiconductor industry.

Conclusion

Robert H Pagliaro, Jr. is a prominent inventor whose work in silicon technology has led to significant advancements in the field. His patents reflect a deep understanding of material science and engineering, making him a key figure in the ongoing evolution of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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