The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1986
Filed:
May. 10, 1984
Applicant:
Inventors:
John F Corboy, Jr, Ringoes, NJ (US);
Lubomir L Jastrzebski, Plainsboro, NJ (US);
Scott C Blackstone, Hopewell, NJ (US);
Robert H Pagliaro, Jr, Trenton, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156612 ; 156D / ; 156644 ; 148D / ;
Abstract
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.