Hopewell, NJ, United States of America

Scott C Blackstone


Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 149(Granted Patents)


Location History:

  • Hopewell, NJ (US) (1983 - 1986)
  • Mount Prospect, IL (US) (1986)

Company Filing History:


Years Active: 1983-1986

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5 patents (USPTO):Explore Patents

Title: **The Innovative Mind of Scott C. Blackstone**

Introduction

Scott C. Blackstone is an accomplished inventor based in Hopewell, NJ, USA. With five patents to his name, his contributions to the field of semiconductor technology are noteworthy. He is currently employed at RCA Inc., where he continues to push the boundaries of innovation.

Latest Patents

Blackstone's most recent patents demonstrate his expertise in the development of advanced semiconductor devices. His first notable patent, titled "Vertical IGFET with internal gate and method for making same," describes a vertical insulated gate field-effect transistor (IGFET). This innovative device features a substantially planar silicon wafer with a source and drain electrode configuration that allows for effective current regulation via an internally disposed insulated gate electrode. Utilizing an epitaxial lateral overgrowth technique, this technology enhances the performance and efficiency of modern electronic devices.

In addition, his second patent, "Method for growing monocrystalline silicon through mask layer," outlines a method for forming a monocrystalline silicon layer on a semiconductor substrate. By employing a two-step deposition/etching cycle, Blackstone's approach allows for the growth of monocrystalline silicon through mask apertures, showcasing his commitment to improving semiconductor manufacturing processes.

Career Highlights

Throughout his career, Blackstone has made significant strides in the semiconductor industry. His innovative work has been recognized through several patents that reveal his dedication to research and development. By focusing on improving silicon structures, he has contributed to the advancement of sustainable and efficient semiconductor technology.

Collaborations

Scott Blackstone works alongside notable colleagues, including John F. Corboy, Jr., and Lubomir L. Jastrzebski. Their combined expertise and collaborative efforts have fostered an innovative environment within RCA Inc., driving the company toward further advancements in the field of semiconductor technology.

Conclusion

Scott C. Blackstone's impact on the semiconductor industry is undeniable, with five patents showcasing his innovative spirit and dedication to research. Through his latest patents, he has demonstrated a deep understanding of the technologies that are shaping the future of electronics. As he continues his work at RCA Inc., the contributions of this talented inventor are sure to resonate in the industry for years to come.

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