The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1983
Filed:
Jul. 20, 1981
Applicant:
Inventor:
Scott C Blackstone, Hopewell, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B01J / ;
U.S. Cl.
CPC ...
29591 ; 29571 ; 29578 ; 357 59 ; 156628 ;
Abstract
A method for forming closely spaced conductors suitable for use, for example, in CCD's and MESFET's is described utilizing an edge diffusion technique to convert exposed edge portions of a polycrystalline silicon layer to a non-etchable form. The converted portions are precisely and accurately formed to serve as spacers, thereby defining a narrow gap between adjacent conductive lines.
Blackstone, Scott. (1983). Method of forming closely spaced lines or contacts in semiconductor (U.S. Patent No. 4402128). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4402128
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile