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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

John Espinoza Sanchez, Jr

This inventor holds 24 USPTO granted patents, primarily in Memory Devices. Top assignees: Unity Semiconductor Corporation, Advanced Micro Devices Corporation, Hefei Reliance Memory Limited. Active years: 1997-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Espinoza Sanchez, Jr. Retrieved from https://idiyas.com/inventor/john-espinoza-sanchez-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 83.3

Average Co-Inventor Count = 5.6

ph-index = 12

Forward Citations = 311(Granted Patents)


Company Filing History:

goldMedal12 out of 301 
 
Unity Semiconductor Corporation
 patents
silverMedal7 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal4 out of 76 
 
Hefei Reliance Memory Limited
 patents
4. 1 out of 23,672 
 
Amazon Technologies, Inc.
 patents

Years Active: 1997-2023

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Areas of Expertise:
Two-Terminal Memory
Multi-Resistive State
Semiconductor Component
Reactive Metal Layer
Conductive Oxide
Metal Layers Thickness
Memory Element
Damascene Processing
Barrier Layer Effectiveness
Cold Sputter Deposition
Stress-Induced Voids
Integrated Circuit
24 patents (USPTO):Explore Patents
1. 11672189 - Two-terminal reversibly switchable memory device (2023-06-06),
2. 11063214 - Two-terminal reversibly switchable memory device (2021-07-13),
3. 10680171 - Two-terminal reversibly switchable memory device (2020-06-09),
4. 10224480 - Two-terminal reversibly switchable memory device (2019-03-05),
5. 9831425 - Two-terminal reversibly switchable memory device (2017-11-28),
6. 9791257 - Determining a thickness of individual layers of a plurality of metal layers (2017-10-17),
7. 9159913 - Two-terminal reversibly switchable memory device (2015-10-13),
8. 8675389 - Memory element with a reactive metal layer (2014-03-18),
9. 8611130 - Method for fabricating multi-resistive state memory devices (2013-12-17),
10. 8062942 - Method for fabricating multi-resistive state memory devices (2011-11-22),
11. 7889539 - Multi-resistive state memory device with conductive oxide electrodes (2011-02-15),
12. 7701834 - Movable terminal in a two terminal memory array (2010-04-20),
13. 7633790 - Multi-resistive state memory device with conductive oxide electrodes (2009-12-15),
14. 7394679 - Multi-resistive state element with reactive metal (2008-07-01),
15. 7326979 - Resistive memory device with a treated interface (2008-02-05),

Title: The Innovative Mind of John Espinoza Sanchez, Jr.

Introduction: John Espinoza Sanchez, Jr. is a visionary inventor based in Palo Alto, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: John Espinoza Sanchez, Jr. holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, John Espinoza Sanchez, Jr. has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, John Espinoza Sanchez, Jr. has collaborated with top scientists, engineers, and researchers, fostering a culture of innovation and excellence in all his projects.

Conclusion: John Espinoza Sanchez, Jr.'s relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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