For the Inventor, By the Inventor

Enter inventor name

Palo Alto, CA, United States of America

John Dwight Larson, Iii

USPTO Granted Patents = 64

Average Co-Inventor Count = 2.3

ph-index = 34

Forward Citations = 3,341(Granted Patents)

Forward Citations (Not Self Cited) = 2,704(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

21 out of 4,671

Agilent Technologies, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

14 out of 1,813

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Wireless Ip, Pte. Ltd.

5. 3 out of 901

Avago Technologies International Sales Pte. Limited

Avago Technologies General IP Pte, Ltd.

Avago Wireless IP Pte Ltd

8. 2 out of 832,843

Other

patents

Years Active: 2001-2021

Loading Chart...

Areas of Expertise:

Bulk Acoustic Wave Resonators

Surface Acoustic Wave Resonators

Piezoelectric Materials

Acoustic Coupling Layers

Environmental Condition Measurement

Film Bulk Acoustic Resonators

Acoustic Galvanic Isolators

AC-DC Power Converters

Impedance Transformation

Acoustic Filters

Thin-Film Transformers

Temperature Compensation

64 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11152909 - Bulk acoustic wave resonators having low atomic weight metal electrodes (2021-10-19),

2. 10284168 - Bulk acoustic wave resonator (2019-05-07),

3. 10177735 - Surface acoustic wave (SAW) resonator (2019-01-08),

4. 9679765 - Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation (2017-06-13),

5. 9243316 - Method of fabricating piezoelectric material with selected c-axis orientation (2016-01-26),

6. 9225313 - Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics (2015-12-29),

7. 9088265 - Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer (2015-07-21),

8. 9048812 - Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer (2015-06-02),

9. 8796904 - Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer (2014-08-05),

10. 8673121 - Method of fabricating piezoelectric materials with opposite C-axis orientations (2014-03-18),

11. 8587391 - Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer (2013-11-19),

12. 7852644 - AC-DC power converter (2010-12-14),

13. 7841055 - Method of manufacturing vertically separated acoustic filters and resonators (2010-11-30),

14. 7795997 - Apparatus and method for measuring an environmental condition (2010-09-14),

15. 7737807 - Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators (2010-06-15),

Title: The Innovative Mind of John Dwight Larson, III

Introduction:

John Dwight Larson, III, a prolific inventor based in Palo Alto, CA, has made a significant impact in the field of technology with his numerous patents.

Latest Patents:

Larson's latest patents revolve around Bulk Acoustic Wave (BAW) resonators featuring intricate electrode designs and precise acoustic stack thicknesses. These innovations showcase Larson's deep understanding of acoustic impedance materials and resonator functionality.

Career Highlights:

With an impressive portfolio of 66 patents, Larson has established himself as a leading figure in the tech industry. His work at companies like Agilent Technologies, Inc and Avago Technologies Wireless IP (Singapore) Pte. Ltd. has been instrumental in shaping cutting-edge technologies.

Collaborations:

Throughout his career, Larson has collaborated with talented individuals such as Richard C Ruby and Paul D Bradley. These partnerships have led to groundbreaking advancements in the field of BAW resonators and acoustic technologies.

Conclusion:

John Dwight Larson, III's dedication to innovation and his contributions to the field of technology demonstrate his remarkable expertise and creativity. His impact will undoubtedly continue to influence future generations of inventors and researchers.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…