The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Apr. 19, 2018
Applicant:

Avago Technologies International Sales Pte. Limited, Singapore, SG;

Inventors:

Paul Bradley, Los Altos, CA (US);

John D. Larson, III, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/56 (2006.01); H03H 9/17 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 9/0211 (2013.01); H03H 9/02015 (2013.01); H03H 9/131 (2013.01); H03H 9/175 (2013.01); H03H 9/56 (2013.01); H03H 9/568 (2013.01);
Abstract

A BAW resonator comprises: a substrate comprising an acoustic reflector; a first electrode disposed over the acoustic reflector, and comprising a first electrode layer comprising a comparatively high acoustic impedance material, and a second electrode layer comprising a comparatively low acoustic impedance; a piezoelectric layer disposed over the second electrode layer; and a second electrode disposed over the piezoelectric layer, and comprising a third electrode layer comprising the low acoustic impedance, and a fourth electrode layer comprising the comparatively high acoustic impedance material and being disposed directly on the piezoelectric layer. A total thickness of an acoustic stack of the BAW resonator is approximately λ/2, where λ is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator.


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