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Avago Technologies General IP Pte, Ltd.

Avago Wireless IP Pte Ltd

John Dwight Larson, Iii

Richard C Ruby

Paul D Bradley

Yury Oshmyansky

Stephen Ellis

Kevin J Grannen

Stephen Roy Gilbert

Jyrki Kaitila

Mark A Unkrich

Graham Flower

Storrs Townsend Hoen

Dariusz Burak

John Choy

Michael Louis Frank

Annette Claire Grot

Phil Nikkel

Ian Hardcastle

Alexandre Shirakawa

Richard Keith Karlquist

Stefan Bader

Herbert L Ko

Kent W Carey

Steve Gilbert

Naghmeh Sarkeshik

Mark A Hueschen

Sergey Mishin

Ken A Nishimura

Chris Feng

William Richard Trutna

Klaus-Guenter Oppermann

Robert Thalhammer

Tiberiu Jamneala

Domingo A Figueredo

Donald Lee

Farid Matta

Urupattur C Sridharan

Tina L Lamers

Hongjun Feng

Rick Snyder

Brice Ivira

Benjamin M Yu

Qing Bai

Carrie A Rogers

Ivan Ionash

Tracy Verhoeven

Paul A Bradley

A BAW resonator comprises: a substrate comprising an acoustic reflector; a first electrode disposed over the acoustic reflector, and comprising a first electrode layer comprising a comparatively high acoustic impedance material, and a second electrode layer comprising a comparatively low acoustic impedance; a piezoelectric layer disposed over the second electrode layer; and a second electrode disposed over the piezoelectric layer, and comprising a third electrode layer comprising the low acoustic impedance, and a fourth electrode layer comprising the comparatively high acoustic impedance material and being disposed directly on the piezoelectric layer. A total thickness of an acoustic stack of the BAW resonator is approximately &#x3bb;/2, where &#x3bb; is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator.

Bulk acoustic wave resonators having low atomic weight metal electrodes

A bulk acoustic wave (BAW) resonator includes: an acoustic reflector disposed in a substrate; a lower electrode disposed over the acoustic reflector; a piezoelectric layer disposed over the lower electrode; and an upper electrode disposed over the piezoelectric layer. A contacting overlap of the lower electrode, the piezoelectric layer and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator. An opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating.

Bulk acoustic wave resonator

An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 &#x3a9;-cm, and less than approximately 15000 &#x3a9;-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 &#x3bc;m to approximately 30.0 &#x3bc;m, and is substantially without iron (Fe).

Surface acoustic wave (SAW) resonator

A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.

Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation

In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (C) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.

Method of fabricating piezoelectric material with selected c-axis orientation

A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.

Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics

A bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN); and a second electrode disposed over the first piezoelectric layer.

Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.

Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer

In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (C) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (C) over the substrate and adjacent to the first piezoelectric layer.

Method of fabricating piezoelectric materials with opposite C-axis orientations

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.

Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer

An AC-DC power converter is composed of AC input, a first rectifying circuit, a second rectifying circuit, a DC-DC converter and a DC output. The DC-DC converter has a DC input. The first rectifying circuit and the second rectifying circuit are connected in parallel between the AC input and the DC input of the DC-DC converter. At least one of the rectifying circuits comprises a phase shifting element that provides a phase shift at the AC line frequency.

AC-DC power converter

An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

Method of manufacturing vertically separated acoustic filters and resonators

A sensor senses an environmental condition. The sensor includes a film bulk acoustic resonator that includes a layer of material that causes resonant frequency and/or quality factor shifts of the film bulk acoustic resonator in response to changes in the environmental condition. The environmental condition may be relative humidity and the layer of material may be a moisture absorptive material.

Apparatus and method for measuring an environmental condition

Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The electrically-isolating acoustic coupler comprises series-connected decoupled stacked bulk acoustic resonators (DSBARs).

Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators

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Palo Alto, CA, United States of America

John Dwight Larson, Iii