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For the Inventor, By the Inventor

Shanghai, China

John Chen

USPTO Granted Patents = 11 

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 72(Granted Patents)


Company Filing History:

goldMedal11 out of 1,723 
 
Semiconductor Manufacturing International (shanghai) Corporation
 patents
silverMedal1 out of 934 
 
Semiconductor Manufacturing International (beijing) Corporation
 patents
where one patent can have more than one assignee

Years Active: 2008-2015

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11 patents (USPTO):
1. 9048300 - Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies (2015-06-02),
2. 9024281 - Method for dual energy implantation for ultra-shallow junction formation of MOS devices (2015-05-05),
3. 8551831 - Silicon germanium and polysilicon gate structure for strained silicon transistors (2013-10-08),
4. 8466050 - Method for dual energy implantation for ultra-shallow junction formation of MOS devices (2013-06-18),
5. 8106423 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2012-01-31),
6. 8030165 - Poly gate etch method and device for sonos-based flash memory (2011-10-04),
7. 7709336 - Metal hard mask method and structure for strained silicon MOS transistors (2010-05-04),
8. 7591659 - Method and structure for second spacer formation for strained silicon MOS transistors (2009-09-22),
9. 7557000 - Etching method and structure using a hard mask for strained silicon MOS transistors (2009-07-07),
10. 7425488 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2008-09-16),
11. 7335543 - MOS device for high voltage operation and method of manufacture (2008-02-26),

Title: John Chen: Innovator in Semiconductor Technologies

Introduction

John Chen is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technologies, holding a total of 11 patents. His work focuses on enhancing the performance and efficiency of integrated circuit devices.

Latest Patents

Among his latest patents is the "Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies." This patent describes a method for forming a CMOS integrated circuit device, which includes providing a semiconductor substrate, forming a gate layer, and etching source and drain regions to enhance performance through strain. Another notable patent is the "Method for dual energy implantation for ultra-shallow junction formation of MOS devices." This invention involves an apparatus for implanting ions into a semiconductor wafer, utilizing an ion source and accelerator to create a precise ion beam for improved device performance.

Career Highlights

John Chen has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has allowed him to develop innovative solutions that address the challenges faced in semiconductor manufacturing.

Collaborations

Throughout his career, John has collaborated with notable professionals in the field, including Hanming Wu and Xian Jay Ning. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of his patented inventions.

Conclusion

John Chen is a distinguished inventor whose work in semiconductor technologies has led to numerous patents and innovations. His contributions continue to shape the future of integrated circuit devices and enhance their performance in various applications.

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