Taipei, Taiwan

Jiun-Yun Li

This inventor holds 10 USPTO granted patents and 7 published patent applications. Top assignees: National Taiwan University, Taiwan Semiconductor Manufacturing Comp. Ltd., Opto Tech Corporation. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiun-Yun Li. Retrieved from https://idiyas.com/inventor/jiun-yun-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 4.9

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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10 patents (USPTO):Explore Patents

Title: Jiun-Yun Li: Innovator in Electronic Devices

Introduction

Jiun-Yun Li is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of electronic devices, holding a total of eight patents. His innovative work focuses on enhancing the functionality and efficiency of electronic components.

Latest Patents

One of Jiun-Yun Li's latest patents is for an electronic device with a conductive resonator. This device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other, while the accumulation gate is positioned over them. The conductive resonator consists of three portions, with the first and second portions located on opposite sides of the accumulation gate. The third portion interconnects the first and second portions across the depletion gates, with its bottom surface lower than that of the accumulation gate.

Another notable patent is for a vertical tunnel field-effect transistor (TFET) featuring a U-shaped gate and band aligner. This innovative TFET includes a source layer situated over a substrate, with a first channel layer formed above it. A drain layer is stacked over the first channel layer, with a second channel layer positioned in between. The drain layer and the second channel layer overlap a specific surface portion of the first channel layer, while a gate structure is placed over the channel layer, contacting the sidewall of the second channel layer.

Career Highlights

Jiun-Yun Li has worked with esteemed organizations such as National Taiwan University and Taiwan Semiconductor Manufacturing Company. His experience in these institutions has allowed him to develop and refine his innovative ideas in electronic devices.

Collaborations

Throughout his career, Jiun-Yun Li has collaborated with notable colleagues, including Wei-Chih Hou and Shih-Yuan Chen. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Jiun-Yun Li is a distinguished inventor whose work in electronic devices has led to multiple patents and significant advancements in technology. His contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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