The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Sep. 30, 2016
Opto Tech Corporation, Hsinchu, TW;
Ming-Yi Yan, Taoyuan, TW;
Jhih-You Lu, New Taipei, TW;
Hsien-Chih Huang, Hsinchu, TW;
Yun-Shiuan Li, Taipei, TW;
Jiun-Yun Li, Taipei, TW;
I-Chun Cheng, Taipei, TW;
Chih-Ming Lai, New Taipei, TW;
Yue-Lin Huang, Kaohsiung, TW;
Lung-Han Peng, Taipei, TW;
OPTO TECH CORPORATION, Hsinchu, TW;
Abstract
A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.