Yue-Lin Huang

Title: Innovations of Yue-Lin Huang in Memory Cell Technology

Introduction

Yue-Lin Huang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of memory cell technology. His innovative approach has led to the development of a unique memory cell that combines the functions of both a storage element and a selector.

Latest Patents

Yue-Lin Huang holds 1 patent for his invention titled "Memory cell with functions of storage element and selector." This memory cell features a P-type layer, a tunneling structure, and an N-type layer. The tunneling structure is formed on the P-type layer, while the N-type layer is built on the tunneling structure. The tunneling structure consists of a stack of materials, which allows for the control of the memory cell's state by adjusting the bias voltage applied to the P-type and N-type layers. This innovation enables the memory cell to switch between amorphous and crystalline states, thus providing both memorizing and storing functions.

Career Highlights

Yue-Lin Huang is currently employed at Opto Tech Corporation, where he continues to advance his research and development in memory technologies. His work has positioned him as a key figure in the field, contributing to the evolution of memory cell designs.

Collaborations

Yue-Lin Huang collaborates with talented individuals such as Ming-Yi Yan and Jhih-You Lu, who contribute to his projects and research endeavors.

Conclusion

Yue-Lin Huang's innovative work in memory cell technology exemplifies the potential for advancements in electronic storage solutions. His contributions are paving the way for future developments in the field.