Hsinchu, Taiwan

Hsien-Chih Huang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Hsien-Chih Huang: Innovator in Memory Cell Technology

Introduction: Hsien-Chih Huang is a prominent inventor based in Hsinchu, Taiwan. He is known for his innovative contributions to memory cell technology. His work has significantly impacted the field of electronics and memory storage solutions.

Latest Patents: Hsien-Chih Huang holds a patent for a memory cell with functions of a storage element and selector. This single memory cell integrates a P-type layer, a tunneling structure, and an N-type layer. The tunneling structure is formed on the P-type layer, while the N-type layer is built on the tunneling structure. The tunneling structure consists of a stack of three material layers. By adjusting the bias voltage applied to the P-type and N-type layers, the tunneling structure can be controlled to switch between amorphous and crystalline states. This innovation allows the memory cell to perform both memorizing and storing functions, as well as achieving selector functionality through bias voltage adjustments. Hsien-Chih Huang has 1 patent to his name.

Career Highlights: Hsien-Chih Huang is currently employed at Opto Tech Corporation, where he continues to develop cutting-edge technologies in the field of memory cells. His expertise and innovative mindset have made him a valuable asset to the company.

Collaborations: Hsien-Chih Huang has worked alongside talented colleagues, including Ming-Yi Yan and Jhih-You Lu. Their collaborative efforts have contributed to advancements in memory technology.

Conclusion: Hsien-Chih Huang's work in memory cell technology exemplifies the spirit of innovation and creativity in the field of electronics. His contributions are paving the way for future advancements in memory storage solutions.

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