Opto Tech Corporation

Hsien-Chih Huang

Chih-Ming Lai

Lung-Han Peng

Jiun-Yun Li

I-Chun Cheng

Ming-Yi Yan

Yue-Lin Huang

Jhih-You Lu

Yun-Shiuan Li

A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.

Memory cell with functions of storage element and selector

Growing community of inventors

Hsinchu, Taiwan

Hsien-Chih Huang