Yun-Shiuan Li

Title: Innovations of Yun-Shiuan Li in Memory Cell Technology

Introduction

Yun-Shiuan Li is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory cell technology. His innovative approach has led to the development of a unique memory cell that combines the functions of both a storage element and a selector.

Latest Patents

Yun-Shiuan Li holds a patent for a memory cell with functions of a storage element and selector. This memory cell includes a P-type layer, a tunneling structure, and an N-type layer. The tunneling structure is formed on the P-type layer, while the N-type layer is situated on the tunneling structure. The tunneling structure consists of a stack structure that includes a first material layer, a second material layer, and a third material layer. By adjusting a bias voltage applied to the P-type layer and the N-type layer, the tunneling structure can be controlled to switch between an amorphous state and a crystalline state. This innovation allows the memory cell to perform both memorizing and storing functions effectively.

Career Highlights

Yun-Shiuan Li is currently associated with Opto Tech Corporation, where he continues to advance his research and development in memory technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Yun-Shiuan Li collaborates with talented individuals such as Ming-Yi Yan and Jhih-You Lu, contributing to a dynamic research environment that fosters innovation.

Conclusion

Yun-Shiuan Li's contributions to memory cell technology exemplify the impact of innovative thinking in the field of electronics. His patent reflects a significant advancement that could influence future developments in memory storage solutions.